Emerging semiconductors
Using electrical, thermoelectric and magnetotransport measurements, we investigate charge transport in two-dimensional metal–organic frameworks. This reveals how electronic structure, reduced dimensionality and carrier interactions produce metallic and low-temperature transport behaviour [1].
Using field-effect transistors, we investigate charge transport in metal halide perovskites and other emerging semiconductors. By separating intrinsic channel behaviour from contact resistance, trapping and ion migration, we develop reliable transport models and improve device performance [2].
- Wu, T. et al. Revealing the charge transport physics in metallic coordination nanosheets by thermoelectric and magnetotransport measurements. Sci. Adv. 11, eadt9196 (2025).
- Choi, H. et al. Elucidating contact-limited temperature dependence of charge transport in 2D tin halide perovskite field-effect transistors. J. Phys. Mater. 8, 025012 (2025).