Contact-Limited Temperature Dependence of Charge Transport Paper Published in Journal of Physics: Materials

We have recently published the paper Elucidating Contact-Limited Temperature Dependence of Charge Transport in 2D Tin Halide Perovskite Field-Effect Transistors in Journal of Physics: Materials. Two-dimensional tin halide perovskites have recently generated significant interest due to their ease of processing and high carrier mobility. However, research in this field suffers from an absence of established models that elucidate how charge transport occurs.

We investigated how the carrier mobility of PEA2SnI4 varies across a temperature range from 100 K to 300 K, having isolated the perovskite's intrinsic properties from the influence of contact resistance. We found that the carrier mobility is significantly reduced by contact resistance, especially at lower temperatures. Therefore, we advocate for measurement techniques that account for contact resistance and thus avoid misleading trends in apparent mobility. After considering said contact resistance, we found that the intrinsic mobility of PEA2SnI4 remains largely temperature-independent across the measured range.

For more details, please read the full paper via the link below.

Choi, H. et al. Elucidating Contact-Limited Temperature Dependence of Charge Transport in 2D Tin Halide Perovskite Field-Effect Transistors. Journal of Physics: Materials 8, 2 (2025)